供应韩国Genuv可见光传感器,紫外线传感器-GUVB-S21SD

供应韩国Genuv可见光传感器,紫外线传感器- GUVB-S21SD
特性
氮化铝镓基材料
肖特基型光电二极管
光伏模式运行
良好的可见盲
高响应度与Low Dark Current
应用
紫外线指数监测
Absolute Maximum Ratings
Symbol Unit
Tst ℃
Top ℃
Vr, max. V
Remark
85
3
UV-B Sensor
GUVB-S21SD
Parameter Min. Max.
Storage Temperature
Operating Temperature
Reverse Voltage
-30
-40 90
If,max. ㎃
Popt ㎼/㎠
Tsol ℃
Characteristics (at 25℃)
Symbol Min. Max. Unit
Id 1 ㎁
㎁
㎁
Itc ％/℃
R A/W
λ 230 320 ㎚
㎟
Responsivity Curve Photocurrent along UV Power
Caution
ESD can damage the device hence please avoid ESD.
※Notice: apply to us in the case that Optical Source Power is over 100,000㎼/㎠.
100,000 UVB Lamp
Soldering Temperature
Forward Current
260 within 10 sec.
1
Optical Source Power Range 0.1
Parameter Typ. Test Conditions
Vr = 0.1 V
UVB Lamp, 1㎽/㎠
1 UVI
63
Dark Current
Temperature Coefficient
10% of R
Photo Current Iph
0.076
Responsivity
Spectral Detection Range
Active area
0.13
UVB Lamp
λ = 300 ㎚, Vr = 0 V