TARF-P6111光刻胶TOK
2024-10-21 14:49:31
Substrate
BARC on Si
Resist Thickness
250nm
P.A.B
130℃, 60sec
Exposure
ArF stepper
Exposure Condition
NA: 0.85, σ: 0.60
True Camphor
Binary
P.E.B
130℃, 60sec
Development
TMAH 2.38%, LD nozzle, 30sec
标签：光刻胶TOK
联系方式
厦门良厦贸易有限公司
