AP50N03大功率MOSTO252N道沟场效应MOS管MOS价格

Super Low Gate Charge

EAS Guaranteed

Green Device Available

Excellent CdV/dt effect decline

Advanced high cell density

TrenchtechnologyProduct SummaryBVDSSRDSONID30V7.6mΩ50ADescriptionThe AP50N03 is the high cell density trenchedN-ch MOSFETs, which provide excellent RDSONand gate charge for most of the synchronous buckconverter applications.The meet the RoHS and GreenProduct requirement, EAS guaranteed withfull function reliability approved.